nove mber 2 013 FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 1 FDB38N30U n- channel unifet tm ultra frfet tm mosfet 300 v, 38 a, 120 m features ?r ds( o n ) = 120 m (max.) @ v gs = 10 v , i d = 19 a ? l o w ga te char ge (t yp. 56 nc ) ?l o w c rs s (t yp. 5 5 pf) ? 10 0% a v alanche t este d ?r o h s co m p l i a n t applications ? u ninter ruptible power supply ? lc d /led/pdp t v ? a c- dc pow er supply des c ription unifet tm mosfet is fairchild semicondu ctor ?s hig h voltage mosfet family based on planar str i pe and dmos techn o logy. this mosf et is tailored to r educe on-state r esistance, and to pro v ide be tter switching perfo rmance and higher ava l anche ener gy streng th. unifet ultra f r fet tm mosfet has much superior body diode reverse recovery perfo rmance. its tr r is less than 50n sec and the r everse dv/ dt immunity is 20v/nsec while nor mal planar mosf ets have over 200 nsec and 4 .5v/nsec respectively. ther efore unif et ul tra frfet mo sfet can remo ve add itional compo nent and improve system r eliability in certain applications that r equire per formance imp r ovement of the mosfet?s bo dy diode. th is dev ice family is suitable for switching power co nver ter applications su ch as power factor corre ction (pfc ), flat pane l display ( f pd) t v pow er, atx and electr onic lamp balla sts. g s d d 2 -pak g s d mo sfe t maximum rati n g s t c = 25 o c unless othe rwise n o ted. thermal characteristics symb ol parame ter f db38n 30u unit v dss dr ain to source v o lt a g e 300 v v gss gate to source v o lt age 30 v i d d r a i n c u r r e n t - con t inuou s ( t c = 25 o c) 3 8 a - con t inuou s ( t c = 100 o c ) 22.8 i dm d r a i n c u r r e n t - p u l s e d (no t e 1) 152 a e as s i n g l e p u l s e d av a l a n c h e e n e r g y ( n o t e 2 ) 7 2 2 m j i ar a v a l a n c h e c u r r e n t ( n o t e 1 ) 3 8 a e ar r e p e t i t i v e a v a l a n c h e e n e r g y ( n o t e 1 ) 3 1 . 3 m j d v / d t p e a k d i o d e r e c o v e r y d v / d t ( n o t e 3 ) 2 0 v / n s p d powe r dissip ation (t c = 25 o c) 313 w - der ate above 25 o c2 . 5 w / o c t j , t st g opera t ing a nd s t or age t e mpera t ure ra nge -55 to + 1 50 o c t l maximum lead t empera t ure for solde r in g, 1/8? fr om case for 5 seco nds 300 o c symb ol param e ter f db38n30 u u nit r jc thermal re sist ance , junction to case, max. 0.4 o c/w r ja ther mal re sist ance , junction to ambi ent, max. 62.5 http://
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 2 package marking and ordering information electrical characteristics t c = 2 5 o c unless oth e rwise noted. of f chara c t e rist ics on char act eris tics dynamic char act er is tics sw it ch in g c h a r ac te ris t i c s drain- so urce diode cha r ac te ristic s part nu mbe r t op mar k package p ackin g met hod reel size t a p e wid t h q u a nt ity fd b 3 8 n 30u fdb38n 30u d 2 - p ak t ape and reel 330 mm 24 mm 80 0 unit s symb ol paramet e r t est co nd itio ns min . t y p. max. unit bv dss drain to sour ce b r eakdown v o lt age i d = 250 a, v gs = 0 v, t j = 2 5 o c3 0 0 - - v bv dss / t j breakdown v o lt age t e mpera ture coef ficient i d = 250 a, refer enced to 25 o c - 0. 33 - v / o c i dss zer o ga te v olt age d r ain cur r ent v ds = 300 v, v gs = 0 v - - 2 5 a v ds = 240 v, t c = 125 o c - - 250 i gs s gat e to body leakage cur r ent v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate thr e sh old v o lt age v gs = v ds , i d = 250 a 3 .0 - 5 .0 v r ds( o n) s t atic dr ain to s o urce on resist ance v gs = 10 v , i d = 19 a - 0.103 0.120 g fs for w ard t r a n sconduct ance v ds = 20 v , i d = 19 a - 3 0 - s c is s inpu t cap a cit ance v ds = 25 v, v gs = 0 v , f = 1 mhz - 2510 334 0 pf c oss output c ap acit an c e - 470 625 pf c rs s re ver s e t r an sfer cap acit ance - 55 85 pf q g( tot) t o t a l gate char ge at 10v v ds = 240 v, i d = 38 a v gs = 10 v (n ot e 4) -5 6 7 3 n c q gs gate to source gate charge - 14 - nc q gd gate to d r ain ?miller? char ge - 24 - nc t d( on) t u rn-o n de lay t i me v dd = 1 50 v , i d = 3 8 a , v gs = 10 v , r g = 25 (n o t e 4) -3 3 7 6 n s t r t u rn-on rise t i me - 8 0 1 70 ns t d( of f) t u rn-o f f del ay t i me - 13 3 2 76 ns t f t u rn-o f f fal l t i me - 6 2 1 34 ns i s maximum continuous dr ain to s o urce diode for w ard curr ent - - 38 a i sm maximum pulsed dr ain to source diode f o rwar d cur r ent - - 152 a v sd d r ain to source diode f orwa r d v olt a ge v gs = 0 v , i sd = 38 a - - 1 .4 v t rr r e ver s e reco ver y t i m e v gs = 0 v, i sd = 3 8 a , di f /d t = 100 a/ s -6 0 - n s q rr r e ver s e reco ver y c harge - 0 .097 - c note s: 1 : r e pet it i v e r a t i n g : pul se -w i d th l i m i t ed by ma xi mu m ju nct i o n t e m p e r a t ur e . 2: l = 1 mh, i as = 3 8 a , v dd = 5 0 v , r g = 2 5 , st ar ting t j = 2 5 c. 3: i sd 38 a, di/d t 20 0 a / s, v dd bv ds s , st ar ting t j = 2 5 c. 4 : e ssen t i a l l y in dep en de nt o f op er at i ng tem p e r a t ur e typi cal ch ar acte r i st ics.
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 3 t y pical performance characteristics f i g u re 1. on- r egion char act eris tics figur e 2. t r ans f e r ch ara c te rist ic s f i g u re 3 . on- r e s ist a nc e variat ion vs . figure 4 . body diode f o rwa r d volta g e d r ain current and gate v o l t a g e v a r i a t i o n v s . s o u r c e c u r r e n t and temperature f i gu re 5. ca pac i tan ce char act eris tics f i g u re 6. ga te cha r ge char act erist i cs 0.1 1 10 20 0.1 1 10 100 *n ot es : 1 . 2 5 0 s pu l s e t e s t 2 . t c = 25 o c i d , drain current[a] v ds , d r ai n- sou r ce vo l t age[ v] v gs = 15. 0 v 1 0 .0 v 8 . 0 v 7 . 0 v 6 . 5 v 6 . 0 v 5 . 5 v 23456 7 8 9 1 0 1 10 10 0 20 0 -55 o c 150 o c *not e s : 1 . v ds = 2 0 v 2 . 2 5 0 s p u l se test 25 o c i d , drain current[a] v gs , g a t e - s ou r ce vo l t ag e[ v] 0 2 0406080100 0.08 0. 1 2 0. 1 6 0. 2 0 0. 2 4 0. 2 6 *n ote : t c = 25 o c v gs = 2 0 v v gs = 10v r ds ( o n) [ ], drain- s o urce on- r esist ance i d , drain c u r r en t [ a ] 0.00 . 40 . 81 . 21 . 6 1 10 10 0 20 0 * n ot es: 1. v gs = 0v 2. 25 0 s pul s e test 150 o c i s , r ever se d r ai n c u rrent [a ] v sd , b ody di ode for w a r d vol t age [ v ] 25 o c 0.1 1 1 0 30 10 10 0 10 00 10 00 0 c os s c iss c iss = c gs + c gd (c ds = s hor t e d) c os s = c ds + c gd c rs s = c gd *note: 1. v gs = 0 v 2 . f = 1 m h z c rs s ca pa c i tances [pf] v ds , drain - s o u r ce v o lt ag e [ v ] 0 1 02 03 0 405060 0 2 4 6 8 10 *n o t e : i d = 38a v ds = 60v v ds = 150 v v ds = 240 v v gs , g a te -s o u r c e vo lta g e [v ] q g , t o t a l g a te c h a r g e [n c ]
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 4 t y pical performance characteristics (co n tinue d) f i g u r e 7 . b r e a k d o w n v o l t a g e v a r i a t i o n f i g u r e 8 . m a x i m u m s a f e o p e r a t i n g a r e a vs. temperature figure 9 . ma ximum dra i n cur r ent fig u re 1 0 . unc l a m ped induc tive vs. c a se temperature swi t ching capabili ty figur e 11. tra n sien t the rmal re spon se curv e -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *n ot es : 1 . v gs = 0 v 2 . i d = 1 m a bv ds s , [n orma li z e d] drai n - s o u r ce breakd o w n v o l t ag e t j , j unct i on t e m p e r at ur e [ o c] 1 10 100 500 0.1 1 10 10 0 30 0 30 s 100 s 1ms 10m s i d , drain current [a] v ds , d r a i n - s ource v o l t ag e [v ] op e r a t io n in t h is a r e a i s li mi t e d by r ds( on) * n ot es: 1 . t c = 2 5 o c 2 . t j = 150 o c 3 . sin g l e p u ls e dc 2 5 50 75 100 125 150 0 10 20 30 40 v gs = 10v i d , dr ain cu r r e n t [ a ] t c , c ase t e m p er atur e [ o c] r jc = 0. 4 o c/ w 0.00 1 0 .0 1 0 .1 1 1 0 1 00 1 10 10 0 t j = 2 5 o c t j = 125 o c t av , t i m e i n av al an c h e ( m s ) i as , av alanche current (a) 10 -5 10 -4 10 -3 10 -2 10 -1 1 1e-3 0.01 0. 1 1 0. 01 0.1 0.2 0.05 0.02 *not es: 1 . z jc (t) = 0 . 4 o c/ w max. 2 . d u t y f a c t o r , d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) 0.5 s i n g le pu ls e thermal response [z jc ] recta ngul a r pul s e d u r a t i on [ s ec ] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rec t a n gular puls e dura tion [sec ]
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 5 figure 1 2 . gat e ch arge t e s t cir c uit & w ave for m figur e 13. resist ive swit ch ing t est circuit & w a veforms f i g u re 14 . unc l a m ped induc tive swit ch ing t e s t circ uit & w a vef orms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l du t r g v gs v gs v ds 10% 90% t d( on ) t r t on t of f t d( o f f ) t f v dd 10v v ds r l du t r g v gs v gs v gs i g = const.
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 6 f i g u re 15 . pea k dio d e reco ver y dv/d t t est circ uit & w a v e f o rms dut v ds + _ driv er r g sam e t y p e as dut v gs ? d v / dt c o nt r o l l e d b y r g ?i sd c on t r ol l ed by pu l s e pe r i od v dd l i sd 10 v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driv er r g sam e t y p e as dut v gs ? d v / dt c o nt r o l l e d b y r g ?i sd c on t r ol l ed by pu l s e pe r i od v dd l l i sd 10 v v gs ( driv er ) i sd ( dut ) v ds ( dut ) v dd bo dy d i o d e for w ard v o l t ag e dr op v sd i fm , bo dy di od e fo r w a r d c u rr en t bo dy d i od e r e v e r s e c u r r e n t i rm bo dy diod e r e cov e r y dv /d t di/dt d = gate pul s e w i d t h ga te pu l s e pe r i od --- --------- -------- ------ d = gate p ul s e w i d t h ga te pu l s e pe r i od --- --------- -------- ------
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fai r child semi co nduct o r corpo r at ion f d b 38n30 u rev. c1 www.fairchi l dsemi.c o m 7 mechanical dimensions figure 1 6 . t o 26 3 (d 2 p ak), molded , 2- lea d , sur f a ce mo unt package d r awings ar e pr ovided as a servic e to customers considering f a ir ch ild co mponent s. draw ings may cha nge in an y manner w i tho ut notice . plea se note the revision and /or da te on the dr aw in g and cont act a f a ir child semicondu ctor rep r esent ative to ver ify or o b t a in the most recent revision. package spe c ifications do not exp and the terms of f a irchild? s w o rldwide t e rms an d conditio n s, specif- ically the war r anty ther ein, w hich cove rs fairchild pr oduct s . always visit f a ir child semiconductor ? s online p a ckag ing ar ea for the most recent p ackage dr awin gs: h ttp://www .fairchildsemi.com/ p a ckage/p a ckaged et ails.html?id=pn_t t 263- 002
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